Infineon Technologies has released the world’s first gallium nitride (GaN) power transistors with an integrated Schottky diode for industrial applications. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode improves power system performance by eliminating undesirable deadtime losses, hence enhancing overall system efficiency. Furthermore, the integrated solution simplifies the power stage design and lowers BOM costs.
GaN-based topologies may experience higher power losses in hard-switching applications due to GaN devices’ higher effective body diode voltage (VSD). This worsens with long controller dead-times, resulting in lesser efficiency than desired.
Until date, power design engineers frequently used an external Schottky diode in parallel with the GaN transistor or attempted to reduce dead-times through their controllers.
All of this requires extra effort, time, and money. Infineon’s new CoolGaN Transistor G5 addresses these issues by providing a GaN transistor with an integrated Schottky diode suitable for usage in server and telecom IBCs, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power PSUs, and motor drives.
Due to the absence of a body diode, the reverse conduction voltage (VRC) of a GaN transistor is determined by the threshold voltage (VTH) and the OFF-state gate bias (VGS).
Furthermore, the VTH of a GaN transistor is often higher than the turn-on voltage of a silicon diode, resulting in a disadvantage during reverse conduction, also known as the third quadrant. As a result, this novel CoolGaN Transistor has lower reverse conduction losses, compatibility with a wider range of high-side gate drivers, and, with deadtime relaxed, greater controller compatibility, resulting in a simpler design.
The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 m? transistor in 3 x 5 mm PQFN package.
Leadership Comments
“As gallium nitride technology becomes increasingly widespread in power designs, Infineon recognizes the need for continuous improvement and enhancement to meet the evolving demands of customers”, says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line. “The CoolGaN Transistor G5 with Schottky diode exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further push the boundaries of what is possible with wide-bandgap semiconductor materials.“
Availability
Engineering samples and target datasheet are available upon request.
More information on Infineon’s CoolGaN Transistors with integrated Schottky diode is available on here.
