The highest performance levels in power electronics are made possible by gallium nitride (GaN) technology. But up until now, GaN providers have approached package sizes and kinds differently, which has caused fragmentation and left customers without a variety of footprint-compatible sources.
The high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1) are Infineon Technologies AG’s solution to this problem.
With a typical on-resistance of 1.1 m?, the CoolGaN G3 Transistor 100 V devices will be offered in a 5×6 RQFN package. Furthermore, the usual resistance of an 80 V transistor in a 3.3×3.3 RQFN package is 2.3 m?.
For the first time, these CoolGaN G3 Transistor 100 V provide a footprint that makes it simple to implement complementary layouts and multi-sourcing techniques for silicon-based devices. When combined with GaN, the new packages provide minimal parasitics and a low-resistance connection, allowing for high-performance transistor output in a well-known footprint.
In addition to enhanced thermal conductivity, this chip and package combination enables a high degree of robustness in terms of thermal cycling because of the higher copper density and bigger exposed surface area, which facilitate heat distribution and dissipation.
Leadership Comments
“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
Availability
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.
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