A DRDO laboratory named Solid State Physics Laboratory has effectively created domestic methods of manufacturing 4-inch-diameter silicon carbide (SiC) wafers, as well as for creating monolithic microwave integrated circuits (MMICs) up to 40W and gallium nitride (GaN) high electron mobility transistors (HEMTs) up to 150W for applications up to X-band frequencies. Next-generation applications in the fields of clean energy, aerospace, and defense are vital adopter of GaN/SiC technology.
Future combat systems, RADARS, electronic warfare systems, and green energy solutions all depend on this cutting-edge technology because it provides increased performance, decreased size and weight, and higher efficiency.
GaN/SiC technology offers a crucial basis for communications, intelligence, reconnaissance, and unmanned systems for both military and commercial sectors, including electric vehicles and renewable energy, in response to the growing need for lighter and more compact power sources in future combat systems.
chas successfully established indigenous GaN on SiC based MMICs with limited production capabilities. These cutting-edge multifunctional MMICs serve a broad range of applications in space, aerospace, 5G/satellite communications, and next-generation strategic systems.
An important step in India’s path to “Aatmanirbhar Bharat” is the creation of commercially viable SiC and GaN-based MMIC technology, which promotes independence in semiconductor technology.
According to Power Systems Design, the market for power semiconductor devices is expanding quickly, with projections of $41.81 billion in 2023 and $49.23 billion by 2028. The growing need for energy-efficient solutions across a range of industries is fueling this expansion, and as power electronics develop further, the main goals will be to boost power density, increase efficiency, and push the limits of voltage and current handling capabilities.
