Higher power levels with reduced power losses are becoming the norm for many industrial applications nowadays. Increasing the DC link voltage is one method to accomplish this. With the launch of the CoolSiC Schottky diode 2000 V G5 product family in September 2024, Infineon Technologies is responding to this market trend by introducing the first discrete SiC diodes with a breakdown voltage of 2000 V.
A Schottky diode in the TO-247-2 package, which is pin-compatible with the majority of current TO-247-2 packages, has now been added to the product line. The product series is suited for solar and EV chargers since it works flawlessly with DC link voltages up to 1500 VDC.
Current ratings for the CoolSiC Schottky diode 2000 V G5 in the TO-247-2 package range from 10 to 80 A. Compared to 1200 V solutions, it enables developers to achieve higher power levels in their applications while halving the number of components. This makes the overall design simpler and makes the switch from multi-level to two-level topologies easier.
Furthermore, the Schottky diode in the TO-247-2 package uses. XT interconnection technology, which improves heat management by drastically lowering impedance and thermal resistance.
HV-H3TRB reliability testing has confirmed the robustness of humidity. The diodes have a low forward voltage and neither reverse recovery nor forward recovery, which guarantees better system performance.
The CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package, which Infineon introduced in the spring of 2024, are a perfect fit for the 2000 V diode family. The CoolSiC Schottky Diode 2000 V is offered in the TO-247PLUS-4 HCC packaging in addition to the TO-247-2 package.
Availability
The CoolSiC Schottky Diode 2000 V G5 family in TO-247-2 is available now. In addition, Infineon offers an evaluation board for the 2000 V CoolSiC product family, as well as a matching gate driver portfolio. Further information is available at www.infineon.com/diodes-2000v-g5.
