Diodes Incorporated has expanded its silicon carbide (SiC) product line with the introduction of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes.
The DSCxxA065LP series, rated at 4A, 6A, 8A, 10A, and 12A, is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC to DC and AC to DC conversion, renewable energy, data centers (particularly those that process heavy artificial intelligence (AI) workloads), and industrial motor drives.
The industry-leading FOM, calculated as FOM=QC×VF, is attributed to:
- Negligible switching losses, thanks to the absence of reverse recovery current and low capacitive charge (QC), and
- Low forward voltage (VF) minimizing conduction losses, enhancing overall power efficiency.
- These characteristics make them ideal for high-speed switching circuits.
High-performance 650V SiC Schottky diodes have the industry’s lowest reverse leakage (IR) at 20µA (max). This reduces heat dissipation and conduction losses, increasing system stability and reliability, especially when compared to silicon Schottky devices. This reduction in heat dissipation lowers both cooling and operational costs.
The compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package features a large underneath heat pad to reduce thermal resistance. The T-DFN8080-4 is a better option to the TO252 (DPAK), as it takes up less board space and has a larger heat pad. This improves circuit design by boosting power density, decreasing overall solution size, and minimizing cooling costs.
Availability and Pricing
The 4A DSC04A065LP, 6A DSC06A065LP, 8A DSC08A065LP, 10A DSC10A065LP, and 12A DSC12A065LP are available at $1.25, $1.55, $1.80, $2.10, and $2.40, respectively, each in 2,500-piece quantities.
