In many industrial applications nowadays, higher DC link voltage is necessary to shift to higher power levels with reduced power losses. The CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode available on the market with a breakdown voltage of 2000 V, is Infineon Technologies’ solution to this bottleneck.
The product line has current ratings ranging from 10 to 80 A and is appropriate for applications with DC link voltages up to 1500 VDC. Because of this, it is perfect for applications requiring higher DC link voltage, such solar and EV charging.
The TO-247PLUS-4-HCC package for the product family has a clearance distance of 5.4 mm and creepage of 14 mm.
A much higher power density is made possible by this and a current rating of up to 80 A. With just half as many components as 1200 V solutions, it enables developers to create applications with higher power levels.
This facilitates a seamless transition from multi-level topologies to 2-level topologies and streamlines the overall architecture.
Better heat management is also made possible by the CoolSiC Schottky diode 2000V G5’s use of the .XT interconnection technology, which results in much lower thermal resistance and impedance.
Additionally, HV-H3TRB reliability tests have shown the robustness against dampness. The diodes have a low forward voltage and neither forward recovery nor reverse recovery current, which guarantees improved system performance.
The CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package, which Infineon unveiled in the spring of 2024, are a perfect fit for the 2000 V diode family. The TO-247-2 package, which will be released in December 2024, will add CoolSiC diodes 2000 V to the portfolio. Additionally, a corresponding gate driver portfolio is offered for the CoolSiC MOSFETs 2000 V.
Availability
The CoolSiC Schottky Diode 2000 V G5 family in TO-247PLUS-4 HCC is available now.
An evaluation board for product family is also available.
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