CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense are two new CoolGaN product innovations introduced by Infineon Technologies. Outstanding soft- and hard-switching behavior is offered by CoolGaN BDS, which offers bidirectional switches at 40 V, 650 V, and 850 V.
This family’s target applications include rectifiers, inverters, battery management systems, and USB ports on mobile devices.
Transistor switch functionalities are merged into a single package with the CoolGaN Smart Sense devices, which further simplify design and significantly reduce power losses thanks to lossless current sensing. For use in consumer USB-C chargers and adapters, they are perfect.
The CoolGaN BDS high voltage switch has four operating modes and is a genuine normally-off monolithic bi-directional switch that will be available at 650 V and 850 V. The devices are based on the gate injection transistor (GIT) technology and have two independent isolated control gates with distinct substrate terminals.
CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense exhibit exceptional performance in blocking voltages in both directions under repeated short-circuit circumstances by utilizing the same drift area.
Applications can achieve improved efficiency, density, and reliability by employing one BDS in place of four traditional transistors. In addition, considerable cost reductions are realized.
When replacing back-to-back switches in single-phase H4 PFC and HERIC inverters as well as three-phase Vienna rectifiers, the devices maximize performance. DC/AC or AC/DC topologies with single-stage AC power conversion are further implementations.
A normally-off, monolithic bi-directional switch, the CoolGaN BDS 40 V is built using Infineon’s proprietary Schottky Gate GaN technology. With its single-gate and common-source architecture, it is tailored to replace back-to-back MOSFETs used as disconnect switches in battery-powered consumer items.
It can block voltages in both directions. There are other items that will come after the initial 40 V CoolGaN BDS device, which has a 6 m? RDS(on). When 40 V GaN BDS is used instead of back-to-back Si FETs, PCB area is saved by 50–75 percent and power losses are reduced by more than 50 percent, all at a cheaper cost.
The CoolGaN Smart Sense devices may be connected to a controller current sense for peak current management and overcurrent protection. They also have a 2 kV electrostatic discharge withstand. For maximum compatibility, the present sensing response time of about 200 ns is equivalent to or less than the typical controller blanking time.
The devices implementation leads to cost savings and greater efficiency. In comparison to conventional 150m? GaN transistors, the CoolGaN Smart Sense devices offer comparable efficiency and thermal performance at a lower cost at a higher RDSs(on) of, say, 350 m?.
Additionally, the devices are footprint compatible with Infineon’s transistor-only CoolGaN package, which further simplifies design with Infineon’s GaN devices by removing the requirement for layout rework and PCB respin.
Availability
Engineering samples of the CoolGaN BDS 40 V are available now for 6 m? and will follow in Q3 2024 for 4 m? and 9 m?. Samples of the CoolGaN BDS 650 V will be available in Q4 2024, and 850 V will follow early 2025. CoolGaN Smart Sense samples will be available in August 2024.
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