Atomera Chief Scientist Marek Hytha will discuss research on Mears Silicon TechnologyTM (MST®), a platform for atomic-scale substrate engineering that opens up new possibilities in applications beyond CMOS. MST® is a technology that improves the performance of silicon-based semiconductor devices by introducing ultra-thin layers of oxygen into silicon wafers.
MST may be precisely tailored to improve important semiconductor properties, such as diffusion blocking, variability, mobility, gate leakage, and reliability across GaN-on-Si, piezoelectric, and spintronic applications, thanks to its customizable layer count, spacing, and composition.
The Poster Will Cover:
- MST Substrate for GaN-on-Si Epitaxy
- Building on its successful use in CMOS and RF-SOI devices, MST grown on Si (111) substrates is now being explored as a virtual substrate for GaN-on-Si Epitaxy to improve material quality and device performance, reduce leakage current and provide higher breakdown voltage for RF and power applications.
- MST Piezoelectric Substrate
- The oxygen atoms in MST form polar Si–O–Si dipoles. These dipoles, while randomly oriented in their as-grown state, can be aligned through applied electric fields and mechanical stress. This alignment induces net polarization, effectively generating a measurable piezoelectric effect in an otherwise non-piezoelectric silicon, opening pathways for integrating piezoelectric functions directly into standard silicon chips.
- MST-Mn Diluted Magnetic Semiconductor Virtual Substrate for Spintronics
- MST enables spintronic applications by supporting stable, room-temperature diluted magnetic semiconductors (DMS) in silicon. With uniform distribution of elements like manganese (Mn), MST is expected to provide efficient spin injection and carrier-mediated ferromagnetism, unlocking next-gen devices like MRAM and spin-LEDs for energy-efficient computing.
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