As part of a PowerAmerica Institute Initiated Proposal (IIP) that advocates wide-bandgap (WBG) power semiconductor technology, Atomera reported that its concept paper on Gallium Nitride on Silicon (GaN-on-Si) technologies has been accepted to proceed to the proposal stage.
The paper describes Atomera’s Mears Silicon Technology (MST) advantages in GaN material quality compared with GaN films grown on standard silicon and proposes a partnership with other industry and research partners.
The project would be eligible for funding from PowerAmerica if it were approved at the proposal stage, allowing Atomera to improve and expand GaN-on-Si manufacturing utilizing MST.
This strategy focuses on enhanced GaN production techniques with increased wafer-level yield and device-level performance for power electronics.
PowerAmerica’s goal is to accelerate the development and use of WBG power semiconductor technologies, which allow electronic components to be faster, smaller, and more efficient than equivalent silicon-based devices.
Atomera’s dedication to innovation and cooperation with leading industry and academic partners is demonstrated by participation in this initiative.
Leadership Comments
“Compound semiconductors, and GaN specifically, are important for the continued advancement of wide bandgap semiconductors,” said Scott Bibaud, CEO of Atomera. “One of the major challenges is low yield numbers, making it very expensive and inefficient to manufacture. At Atomera, we’re working diligently to improve wafer-level yield with MST and to reduce die cost for more widespread adoption of GaN.”
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