In partnership with Analog Devices, Inc. (ADI) and Bourns, Mouser Electronics has released a new eBook that examines the advantages and disadvantages of Gallium Nitride (GaN) technology in the quest for sustainability, performance, and efficiency.
Here 10 Experts Discuss Gallium Nitride Technology examine how GaN technology is transforming power electronics by enabling higher efficiency, faster switching speeds, and greater power density than silicon.
The benefits of GaN technology have broad ramifications for a number of sectors, including consumer electronics, renewable energy, automotive, and industrial applications. Experts from ADI, Bourns, and other businesses provide their thoughts in the new eBook about the advantages of GaN, potential difficulties for novice GaN designers, and the best ways to make the switch from silicon to GaN.
The eBook also features relevant components from Bourns and ADI, such as power inductors, GaN controllers and drivers, and more.
The ADI LTC7890/1 synchronous step-down controllers are high-performance, step-down, DC-to-DC switching regulator controllers that drive N-channel synchronous GaN field effect transistor (FET) power stages from input voltages up to 100 V. These devices simplify design while requiring no protection diodes or other additional external components, compared to a silicon metal-oxide-semiconductor solution.
The LT8418 is a 100 V half-bridge GaN driver that integrates top and bottom driver stages, driver logic control, and protections. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.
High switching frequencies in GaN technology demand a careful selection of passive components.
Bourns provides advanced magnetic components optimized for GaN’s higher frequencies, including their PQ flat power inductors, CWP3230A chip inductors, and TLVR1105T TLVR inductors. These devices feature low inductance, high current ratings, and shielded construction for low radiation.
The Bourns HCTSM150102HL transformer features reinforced isolation, 15mm minimum clearance/creepage distance, and 7.64kV (2s) withstanding voltage to provide an elevated degree of isolation from high voltage hazards. The transformer is constructed with a ferrite toroid core for a high coupling factor and efficiency.
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