In order to improve efficiency and reliability for medium to high frequency applications in automotive, energy, industrial, and telecom systems, Vishay Intertechnology presents two new SiC 1200 V MOSFET power modules.
The Vishay Semiconductors VS-MPY038P120 and VS-MPX075P120 combine the most recent silicon carbide (SiC) technology with a durable transfer mold construction, offering four and six MOSFETs, respectively, in the low profile MAACPAK PressFit package.
Key Features
- The devices reduce switching losses and increase efficiency
- For increased reliability, the rugged transfer mold technology of the VS-MPY038P120 and VS-MPX075P120 allows them to achieve much longer product lifecycles than legacy solutions available on the market, while improving thermal resistance
- For more efficient, cleaner switching, the devices’ low profile helps reduce parasitic inductance and EMI, while saving space
- The modules’ PressFit pins are arranged in a matrix that adheres to industry-standard layouts, allowing for easy replacement of competing solutions in existing designs to enhance performance.
The Key Specifications
- Part number: VS-MPY038P120 VS-MPX075P120
- VDSS: 1200 V
- RDS(ON): 38 m? 75 m?
- ID at +80 °C: 35 A 18 A
- Package: MAACPAK
- Circuit configuration: Full-bridge inverter | Three-phase inverter
- Max. junction temp. range: -55 °C to +175 °C
Availability
Samples and production quantities of the VS-MPX075P120 and VS-MPY038P120 are available now, with lead times of 13 weeks.
To Access The Product Datasheets on The Vishay Website, CLICK HERE | CLICK HERE
