Kioxia Corporation enhances its high-performance storage by announcing that it has started sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices. The new devices, which are designed to satisfy the needs of next-generation mobile applications, such as sophisticated smartphones with on-device AI, provide increased power efficiency and better performance in a compact BGA package.
Kioxia’s UFS Ver. 4.1 devices combine a controller and the company’s ground-breaking BiCS FLASH 3D flash memory in a JEDEC-compliant package. The 8th generation BiCS FLASH 3D flash memory from Kioxia is used in the construction of these new UFS devices.
CBA (CMOS directly Bonded to Array) technology, an architectural advancement that revolutionizes fash memory design, is introduced in this generation. CBA technology allows for significant improvements in density, performance, and power efficiency by directly bonding the CMOS circuitry to the memory array.
Kioxia’s UFS Ver. 4.1 devices are designed to improve user experiences by combining speed and low power consumption, allowing for quicker downloads and more fluid app performance.
Key Features include:
- Available in capacities of 256 gigabytes (GB), 512 GB and 1 terabyte (TB)
- Performance improvement over previous generation(3):
- Random writes: 512 GB / 1 TB approx. +30%
- Random reads: 512 GB approx. +45%, 1 TB approx. +35%
- Power efficiency improvement over previous generation(3):
- Reads: 512 GB / 1 TB approx. +15% improvement
- Writes: 512 GB / 1 TB approx. +20% improvement
- Host Initiated Defragmentation enables delayed garbage collection for uninterrupted fast performance during critical times
- WriteBooster buffer resizing provides better flexibility for optimal performance
- Support of the UFS Ver. 4.1 standard
Reduced package height for the 1 TB model compared to the prior generation(4)
Uses Kioxia’s 8th generation BiCS FLASH™ 3D flash memory(1)
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