The new technology meets the needs of the automotive and industrial market, but it is especially well-suited for EV traction inverter, which are an essential part of electric vehicle (EV) powertrains.
The Generation 4 of STMicroelectronics’ silicon carbide (SiC) MOSFET technology is announced. In terms of ruggedness, power density, and power efficiency, Generation 4 technology is known to set new benchmarks.
The new technology meets the needs of the automotive and industrial market, but it is especially well-suited for EV traction inverter, which are an essential part of electric vehicle (EV) powertrains. As part of its commitment to innovation, the company intends to release additional advanced SiC technology developments through 2027.
To furher state its dominance in the SiC power MOSFET market, ST is promoting additional innovation to take advantage of the higher efficiency and greater power density of SiC when compared to silicon devices.
With even greater advancements in compactness and energy-saving potential, this most recent generation of SiC devices is intended to support EV traction inverter platforms in the future.
Although the market for EVs is still expanding, there are still obstacles in the way of their general adoption, thus automakers are working to provide more reasonably priced EVs. SiC-based 800V EV bus drive systems have lowered EV weight and allowed for quicker charging, enabling automakers to create premium models with longer driving ranges.
The energy efficiency and performance of 400V and 800V EV bus traction inverters will be enhanced by ST’s new SiC MOSFET devices, which will be made available in the 750V and 1200V classes defining a new age for EV traction inverter.
This will extend the benefits of SiC to mid-size and small EVs, which are crucial market segments to support mass market adoption. Additionally, a range of high-power industrial applications, such as datacenters, energy storage systems, and solar inverters, can benefit from the latest generation SiC technology, which greatly increases energy efficiency for these expanding applications.
Availability
ST has completed qualification of the 750V class of the fourth generation SiC technology platform and expects to complete qualification of the 1200V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750V and 1200V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.
ST’s Generation 4 SiC MOSFETs Use cases
Compared to silicon-based solutions, ST’s Generation 4 SiC MOSFETs offer greater efficiency, fewer components, lighter weight, and a longer operating range.
Leading electric vehicle (EV) manufacturers are working with ST to integrate Generation 4 SiC technology into their cars, which will improve performance and energy efficiency.
These advantages are essential for attaining the broad adoption of EVs.
Although EV traction inverters are the main application for ST’s Generation 4 SiC MOSFETs, high-power industrial motor drives can also benefit from the devices’ enhanced switching performance and durability.
In industrial contexts, this leads to lower energy consumption and operating costs through more dependable and efficient motor control.
The efficiency of solar inverters and energy storage systems is improved in renewable energy applications by the Generation 4 SiC MOSFETs, leading to more affordable and environmentally friendly energy solutions.
These SiC MOSFETs can also be used in power supply units for AI server datacenters, where their small size and excellent efficiency are essential for meeting the high power requirements and difficult thermal control issues.
ST at ICSCRM 2024
Attending the annual scientific and industry conference on the latest developments in SiC and other wide bandgap semiconductors, ICSCRM 2024 will be attended by ST. ST technical presentations and an industrial keynote on “High volume industrial environment for leading edge technologies in SiC” will be featured during the event, which will take place in Raleigh, North Carolina from September 29 to October 4, 2024.
Key Comments
“STMicroelectronics is committed to driving the future of electric mobility and industrial efficiency through our cutting-edge silicon carbide technology. We continue to advance SiC MOSFET technology with innovations in the device, advanced packages, and power modules,” said Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group. “Together with our vertically integrated manufacturing strategy, we are delivering industry leading SiC technology performance and a resilient supply chain to meet the growing needs of our customers and contribute to a more sustainable future.”
To Know More About ST’s participation in ICSCRM 2024, CLICK HERE
You must be logged in to post a comment.