Infineon Technologies introduces first product in its new advanced power MOSFET technology 80 V MOSFET OptiMOS 7. Compared to the previous generation, the RDS(on) of the Infineon IAUCN08S7N013 80 V MOSFET OptiMOS 7 has been reduced by more than 50 percent. Now the best RDS(on) in the industry with a maximum of 1.3 m? said the official release.
Named IAUCN08S7N013, the Infineon 80 V MOSFET OptiMOS 7 Features
- Significant increased power density.
- Available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
- Perfect match for the upcoming 48 V board net applications.
- Infineon 80 V MOSFET OptiMOS 7 is designed specifically for the high performance, high quality and robustness.
- Tailored for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Key Benefits For Infineon 80 V MOSFET OptiMOS 7 Users
- Benefits from minimized conduction losses.
- Superior switching performance.
- Highest power density in a 5 x 6 mm² package.
- The IAUCN08S7N013 also features low package resistance and inductance.
- High avalanche current capability.
- For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
Availability
The IAUCN08S7N013 is in mass-production and available now. For More Information, Click Here
Infineon at Embedded World
Embedded World will take place in Nuremberg from 9 to 11 April, 2024, Germany. Infineon will present its products and solutions for decarbonization and digitalization in hall 4A, booth #138 and virtually. Company representatives will also hold several TechTalks as well as presentations at the accompanying Embedded World Conference, followed by discussions with the speakers.