Infineon 80 V MOSFET With Highest Power Density

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Infineon Technologies introduces first product in its new advanced power MOSFET technology 80 V MOSFET OptiMOS 7. Compared to the previous generation, the R_DS(on) of the Infineon IAUCN08S7N013 80 V MOSFET OptiMOS 7 has been reduced by more than 50 percent. Now the best R_DS(on) in the industry with a maximum of 1.3 m? said the official release.

Named IAUCN08S7N013, the Infineon 80 V MOSFET OptiMOS 7 Features

• Significant increased power density.
• Available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
• Perfect match for the upcoming 48 V board net applications.
• Infineon 80 V MOSFET OptiMOS 7 is designed specifically for the high performance, high quality and robustness.
• Tailored for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.

Key Benefits For Infineon 80 V MOSFET OptiMOS 7 Users

• Benefits from minimized conduction losses.
• Superior switching performance.
• Highest power density in a 5 x 6 mm² package.
• The IAUCN08S7N013 also features low package resistance and inductance.
• High avalanche current capability.
• For automotive applications, it has an extended qualification that goes beyond AEC-Q101.

Availability

The IAUCN08S7N013 is in mass-production and available now. For More Information, Click Here

Infineon at Embedded World

Embedded World will take place in Nuremberg from 9 to 11 April, 2024, Germany. Infineon will present its products and solutions for decarbonization and digitalization in hall 4A, booth #138 and virtually. Company representatives will also hold several TechTalks as well as presentations at the accompanying Embedded World Conference, followed by discussions with the speakers.

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