The 600 V CoolMOS 8 high voltage superjunction MOSFET product family is presented by Infineon Technologies. The devices are the P7, PFD7, C7, CFD7, G7, and S7 product families’ successors, combining the greatest characteristics of the 600 V CoolMOS 7 MOSFET family.
The new superjunction MOSFETs improve Infineon’s wide-bandgap portfolio by enabling affordable Si-based solutions. Because they have an incorporated fast body diode, they may be used for a variety of purposes, including micro-solar, EV chargers, servers, and industrial switched-mode power supply units (SMPS).
SMD QDPAK, TOLL, and ThinTOLL 8 x 8 packages are used for the components, which simplify designs and lower assembly costs. The 600 V CoolMOS 8 SJ MOSFETs feature a gate charge (Qg) that is 18% lower at 10 V compared to the CFD7 and 33% lower at 10 V compared to the P7.
Compared to the CFD7 and P7, the product series delivers a 50% reduced output capacitance COSS at 400 V. Furthermore, the reverse recovery charge (Qrr) is 3% less than the CFD7, and the turn-off losses (Eoss) have been lowered by 12% in comparison to the CFD7 and the P7. Additionally, the devices have the lowest reverse recovery time (trr) available on the market, and there has been a 14–42% improvement in thermal performance.
With these characteristics, the devices provide exceptional reliability and efficiency in LLC and ZVS phase-shift full-bridge soft-switching topologies.
Additionally, they offer top-notch performance in hard-switching topologies like TTF, PFC, and others. The devices provide improved power density because of their optimized RDS(on), which enables goods in a Si-based super junction (SJ) technology to be lowered to a single-digit value of 7 m?.
Infineon will showcase the 600 V CoolMOS 8 SJ MOSFETs at the Infineon booth (Hall 7 / Booth 470) at PCIM 2024 in Nuremberg.
Availability
Samples of the 600 V CoolMOS 8 SJ MOSFETs are now available. More information is available at www.infineon.com/coolmos8.
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